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2N2222A NPN BJT Switching transistor (Pack of 5)

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  • Bi-Polar high current NPN Transistor
  • DC Current Gain (hFE) is 100
  • Continuous Collector current (IC) is 800mA
  • Emitter Base Voltage (VBE) is 6V
  • Collector Emitter Voltage (VCE) is 30V
  • Base Current(IB) is 5mA maximum
  • Available in To-92 Package

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SKU 04BG004 Category

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Description

2N2222A–NPN Transistor

The 2N2222A is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture ( Click for wide range of Transistors).

The 2N2222A is considered a very common transistor and is used as an exemplar of an NPN transistor. It is frequently used as a small-signal transistor, and it remains a small general-purpose transistor of enduring popularity.

2N2222A is an NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin. 2N2222A has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. The maximum amount of current that could flow through the Collector pin is 800mA, hence we cannot connect loads that consume more than 800mA using this transistor. To bias a transistor we have to supply current to base pin, this current (IB) should be limited to 5mA.

When this transistor is fully biassed then it can allow a maximum of 800mA to flow across the collector and emitter. This stage is called Saturation Region and the typical voltage allowed across the Collector-Emitter (V­CE) or Base-Emitter (VBE) could be 200 and 900 mV respectively. When the base current is removed the transistor becomes fully off, this stage is called the Cut-off Region and the Base Emitter voltage could be around 660 mV.

The 2N2222A transistor is very much similar to the commonly used NPN transistor BC547. But there are two important features that distinguish both. 2N2222A can allow collector current up to 800mA and also has a power dissipation of 652mW which can be used to drive larger loads than compared with BC547. So if you looking for an NPN transistor that could switch loads of higher current then 2N2222 might the right choice for your project.

Pin Configuration:

2N2222A

 

Pin Number Pin Name Description
1 Emitter Current Drains out through emitter
2 Base Controls the biasing of transistor
3 Collector Current flows in through collector

Features:

  • Bi-Polar high current NPN Transistor
  • DC Current Gain (hFE) is 100
  • Continuous Collector current (IC) is 800mA
  • Emitter Base Voltage (VBE) is 6V
  • Collector-Emitter Voltage (VCE) is 30V
  • Base Current(IB) is 5mA maximum
  • Available in To-92 Package

Applications

  • Can be used to switch high current (up to 800mA) loads
  • It can also be used in the various switching applications.
  • Speed control of Motors
  • Inverter and other rectifier circuits
  • It can be used in Darlington Pair.

Package Includes :

1 x 2N2222 NPN BJT Switching transistor (Pack of 5)

Specification

Collector−Emitter Voltage (VCEO) 40V
Collector−Base Voltage (VCBO) 75V
Emitter-Base Voltage (VEBO) 6V
Collector Current − Continuous (IC) 600mAdc
Junction Temperature  150°C
Storage condition -55°C to +150°C
Length (mm) 4.5
Width (mm) 3.5
Height (mm) 19
Weight (gm) 1 (approx) (each)

 

 

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